4. C - Chemistry, Metallurgy
  5. 21
  6. D

Ramamoorthy Ramesh

C - Chemistry – Metallurgy – 21 – D

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Country: United States Of America

Amorphous barrier layer in a ferroelectric memory cell

H - Electricity – 01 – G
Patent

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Annealing of a crystalline perovskite ferroelectric cell and...

H - Electricity – 01 – L
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Barrier layer for ferroelectric capacitor integrated on silicon

H - Electricity – 01 – L
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C-axis perovskite thin films grown on silicon dioxide

H - Electricity – 01 – L
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Crystallographically aligned ferroelectric films usable in...

G - Physics – 11 – C
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Method of forming high-strength corrosion-resistant steel

C - Chemistry – Metallurgy – 21 – D
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Profile ID: LFCA-PAI-P-1087262

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