C-axis perovskite thin films grown on silicon dioxide

Details C-axis perovskite thin films grown on silicon dioxide C-axis perovskite thin films grown on silicon dioxide

H - Electricity

01

L

H01L 49/02 (2006.01) C23C 14/08 (2006.01) C30B 29/32 (2006.01) G11B 9/02 (2006.01) H01G 7/00 (2006.01) H01L 21/02 (2006.01) H01L 27/115 (2006.01) H01L 41/22 (2006.01)

Patent

CA 2151063

A method and resulting structure for growing a crystalline perovskite film (16) on a silicon dioxide layer (12) by means of an intermediate template layer (14) of a c-axis oriented layered perovskite, such as bismuth titanate. The perovskite film can be ferroelectric lead-lanthanum zirconate titanate or conductive cubic metal oxides used as electrodes for the ferroelectric.

Affiliated with

Also associated with

Rating

C-axis perovskite thin films grown on silicon dioxide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with C-axis perovskite thin films grown on silicon dioxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and C-axis perovskite thin films grown on silicon dioxide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-2059750