Method of depositing fluorinated silicon nitride

Details Method of depositing fluorinated silicon nitride Method of depositing fluorinated silicon nitride

C - Chemistry, Metallurgy

23

C

C23C 14/06 (2006.01) C23C 16/34 (2006.01) C23C 16/509 (2006.01)

Patent

CA 2047536

89-3-705 METHOD OF DEPOSITING FLUORINATED SILICON NITRIDE Abstract Method of forming a fluorinated silicon nitride film on a semiconductor substrate by first forming a coating of ammonium hexafluorosilicate on the electrode of a plasma reactor to serve as a source of fluorine during the silicon nitride deposition procedure. The ammonium hexafluorosilicate coating is formed by generating a plasma of carbon tetrafluorine and oxygen within the reactor, then a plasma of nitrogen, followed by a plasma of silane and helium with nitrogen. The substrate is then placed in the reactor and a plasma employing silane and helium together with nitrogen is generated at low RF frequency to produce a fluorinated silicon nitride film on the substrate.

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