A laser diode and method of manufacture of the diode using a...

Details A laser diode and method of manufacture of the diode using a... A laser diode and method of manufacture of the diode using a...

H - Electricity

01

S

H01S 5/323 (2006.01) C30B 29/38 (2006.01) C30B 29/64 (2006.01) H01L 21/18 (2006.01)

Patent

CA 2632737

GaN single crystal substrates are produced by slicing a GaN single crystal ingot in the planes parallel to the growing direction. Penetration dislocations which have been generated in the growing direction extend mainly in the bulk of the GaN substrate. A few of the threading dislocations appear on the surface of the GaN substrate. GaN substrates of low-dislocation density are obtained.

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