C - Chemistry – Metallurgy – 03 – C
Patent
C - Chemistry, Metallurgy
03
C
C03C 17/23 (2006.01) C03C 17/36 (2006.01) C23C 14/08 (2006.01) C23C 14/18 (2006.01) C23C 28/00 (2006.01)
Patent
CA 2056524
A low emissivity film formed on a substrate, which comprises a coating of oxide films and films whose major component is Ag alternately formed on the substrate in a total of (2n+1) layers where n is an integer being equal to or more than 1, with the innermost layer being an oxide film, wherein an integral width .beta.i(°) of (111) diffraction line of a cubic Ag in an X-ray diffraction diagram of the low emissivity film exists in a first range of 180.lambda./ (d.pi.cos.theta.)~.beta.i~180.lambda./ (d.pi.cos.theta.) +0.15, where d(.ANG.) designates a thickness of a film whose major component is Ag, .lambda.(.ANG.), a wave length of an X-ray for measurement and .theta., Bragg angle.
Ando Eiichi
Miyazaki Masami
Asahi Glass Company Ltd.
Smart & Biggar
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