G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 11/34 (2006.01) G11B 9/14 (2006.01)
Patent
CA 2552958
A memory device, including a plurality of nanoscale memory cells (1510, 1512) created by applying pressure to and removing pressure from one or more regions (1510, 1512) of a substance (1502) to change the electrical conductivity of those regions (1510, 1512). An electrically conductive read probe (1514) determines the conductivities of the regions and thereby the information stored in the cells. A write probe (1508) applies pressure to and removes pressure from selected cells to change the electrical conductivity of those cells and thereby store or erase information.
L'invention concerne un dispositif à mémoire, qui comprend une pluralité de cellules de mémoire d'échelle nanométrique (1510, 1512) créées par application d'une pression sur et retrait de la pression d'une ou de plusieurs zones (1510, 1512) d'une substance (1502) afin de changer la conductivité électrique desdites zones (1510, 1512). Une sonde de lecture électroconductrice (1514) détermine la conductivité de ces zones et, par conséquent, les données enregistrées dans les cellules. Une sonde d'écriture (1508) applique une pression sur ou retire la pression de cellules choisies afin de changer la conductivité électrique desdites cellules et, partant, enregistrer ou effacer des données.
Bradby Jodie Elisabeth
Swain Michael Vincent
Williams James Stanislavs
Smart & Biggar
Wriota Pty Ltd
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