A method of densifying porous substrates by chemical vapor...

C - Chemistry – Metallurgy – 23 – C

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C23C 16/44 (2006.01) C04B 41/50 (2006.01) C04B 41/84 (2006.01) C23C 16/04 (2006.01) C23C 16/32 (2006.01) C23C 16/452 (2006.01)

Patent

CA 2178805

A reaction gas containing methyltrichlorosilane (MTS) and hydrogen is injected into the infiltration chamber (30) in which the substrate is placed andwhere predetermined infiltration temperature and pressure conditions obtain. Thegas entering the infiltration chamber is preheated (by plates 46) so as to bring it up to temperature before coming into contact with the substrate. The residual gas containing the remainder of the reaction gas together with gaseous reaction products is extracted from the chamber. Infiltration is performed at a temperature lying in the range 960°C to 1050°C, and preferably in the range 1000°C to 1030°C, under a total pressure of not more than 15 kPa, and preferably equal to 7 kPa to12 kPa, and the concentration of silicon-containing species in the residual gas is lowered at the outlet from the infiltration chamber, e.g. by injecting an inert gas (via 70).

Une phase gazeuse réactionnelle comprenant du méthyltrichlorosilane (MTS) et de l'hydrogène et introduite dans la chambre d'infiltration (30) dans laquelle est placé le substrat et où règnent des conditions de température et de pression d'infiltration prédéterminées. La phase gazeuse entrant dans la chambre d'infiltration est préchauffée (par les plateaux 46) afin de la porter en température avant contact avec le substrat. La phase gazeuse résiduelle comprenant le reliquat de phase gazeuse réactionnelle et des produits de réaction gazeux est extraite hors de la chambre. L'infiltration est réalisée à une température comprise entre 960 ~C et 1050 ~C, de préférence entre 1000 ~C et 1030 ~C sous une pression totale au plus égale à 15 kPa, de préférence entre 7 kPa et 12 kPa, et la concentration de la phase gazeuse résiduelle en espèces siliciées est abaissée en sortie de la chambre d'infiltration, par exemple par injection de gaz neutre (via 70).

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

A method of densifying porous substrates by chemical vapor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with A method of densifying porous substrates by chemical vapor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and A method of densifying porous substrates by chemical vapor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-2060797

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.