C - Chemistry – Metallurgy – 03 – C
Patent
C - Chemistry, Metallurgy
03
C
C03C 15/00 (2006.01) G02B 5/18 (2006.01) G03F 1/00 (2006.01) G03F 1/14 (2006.01)
Patent
CA 2281291
A method of surface etching silica glass. The method comprises depositing a layer of electrically conductive material on a silica glass substrate with a surface to be etched. A pattern reproducing the etching pattern to be fabricated on the substrate surface is formed on such conductive material through deposition, exposure and development of a resist, by leaving uncovered the areas of said conductive material layer corresponding to the areas of the substrate to be etched. As a conductive material, a material such as titanium is chosen, which can be etched by the same etching medium, such as CHF3, used for etching the substrate. The removal of said conductive material layer and the etching of the substrate in the areas left uncovered by the resist are then performed in a single step.
Ardito Marco
Meneghini Giancarlo
Agilent Technologies Inc.
Cselt - Centro Studi E. Laboratori Telecommunicazioni S.p.a.
Ridout & Maybee Llp
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