C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 25/02 (2006.01) C30B 23/02 (2006.01) C30B 25/20 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01)
Patent
CA 2445772
A method of producing a very large area germanium layer on a silicon substrate, comprises forming an initial layer of germanium on the silicon substrate such that rounded S-K protuberances are produced by lattice mismatch. Oxidation produces silicon dioxide between the protuberances, and a subsequent reduction step exposes the tops of the protuberances. Since the top regions are almost perfectly relaxed and free of stress, these form nucleation sites for the subsequent growth of a final layer of germanium, formed as single crystals each extending from a nucleation site.
L'invention concerne un procédé de fabrication d'une grande couche de germanium sur un substrat de silicium. Ce procédé consiste à former une couche de germanium initiale sur le substrat de silicium de manière à obtenir des protubérances S-K arrondies par décalage de l'axe cristallographique. L'oxydation entraîne la formation de dioxyde de silicium entre lesdites protubérances. Une opération de réduction ultérieure expose le sommet des protubérances. Du fait qu'ils soient presque complètement relâchées et libres de toute tension, ces sommets forment des sites de nucléation destinés à la croissance d'une dernière couche de germanium, formée de monocristaux qui s'étendent depuis le site de nucléation.
Btg International Limited
Gowling Lafleur Henderson Llp
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