Abrasive construction for semiconductor wafer modification

Details Abrasive construction for semiconductor wafer modification Abrasive construction for semiconductor wafer modification

B - Operations, Transporting

24

D

B24D 11/02 (2006.01) B24B 37/04 (2006.01) B24D 3/00 (2006.01) B24D 3/28 (2006.01) B24D 11/00 (2006.01) B24D 13/14 (2006.01)

Patent

CA 2262579

An abrasive construction for modifying a surface of a workpiece, such as a semiconductor wafer. The abrasive construction comprises: a three-dimensional, textured, fixed abrasive element; at least one resilient element generally coextensive with the fixed abrasive element; and at least one rigid element generally coextensive with and interposed between the resilient element and the fixed abrasive element, wherein the rigid element has a Young's Modulus greater than that of the resilient element.

L'invention concerne une construction abrasive pour modifier la surface d'une pièce, telle qu'une plaquette de semiconducteurs. La construction abrasive comprend un élément abrasif fixe, tridimensionnel et structuré et, au moins, un élément élastique qui s'étend généralement dans le même sens que l'élément abrasif fixe. En outre, la construction comprend au moins un élément rigide s'étendant généralement dans le même sens et entre l'élément élastique et l'élément abrasif fixe. L'élément rigide présente un module de Young supérieur à celui de l'élément élastique.

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