4. G - Physics
  5. 02
  6. B

Douglas P. Goetz

G - Physics – 02 – B

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Inventor

Country: United States Of America

Abrasive construction for semiconductor wafer modification

B - Operations – Transporting – 24 – D
Patent

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Combination horizontal and vertical thermal actuator

H - Electricity – 01 – H
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Direct acting vertical thermal actuator

H - Electricity – 01 – H
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Direct acting vertical thermal actuator with controlled bending

B - Operations – Transporting – 81 – B
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Mems-based wavelength equalizer

G - Physics – 02 – B
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Abrasive construction for semiconductor wafer modification

B - Operations – Transporting – 24 – D
Patent

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Profile ID: LFCA-PAI-P-1272931

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