Alignment of lithographic system

Details Alignment of lithographic system Alignment of lithographic system

G - Physics

01

B

26/127

G01B 9/02 (2006.01) G03F 9/00 (2006.01)

Patent

CA 1321298

Abstract A method for lithographic alignment utilized in the manufacture of integrated circuits is described. The procedure includes an initial calibration through the lens system to expose a calibration material in a diffraction grating pattern. An interference pattern is produced above the grating with intersectinglaser beams. By adjusting the path and/or phase of these beams the interference pattern is aligned with the diffraction pattern to establish a calibration pointcorresponding to a reference intensity in the intensity of the diffracted light. A wafer to be exposed is then placed in the exposure tool and is aligned by observing the diffraction pattern from a diffraction grating fiducial mark induced by the calibrated interference pattern.

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