Aqueous acidic formulations for copper oxide etch residue...

Details Aqueous acidic formulations for copper oxide etch residue... Aqueous acidic formulations for copper oxide etch residue...

H - Electricity

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H01L 21/02 (2006.01) C23G 1/10 (2006.01) C11D 1/00 (2006.01) C11D 3/00 (2006.01)

Patent

CA 2740027

A highly aqueous acidic cleaning composition for copper oxide etch removal from Cu-dual damascene microelectronic structures and wherein that composition prevents or substantially eliminates copper redeposition on the Cu-dual damascene microelectronic structure.

L'invention concerne une composition de nettoyage aqueuse très acide pour l'enlèvement par gravure d'oxyde de cuivre de structures microélectroniques à double damasquinage de Cu, la composition empêchant ou éliminant substantiellement la redéposition du cuivre sur la structure microélectronique à double damasquinage de Cu.

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