Back reflector system and devices utilizing same

H - Electricity – 01 – L

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H01L 31/04 (2006.01) H01L 31/0224 (2006.01) H01L 31/052 (2006.01) H01L 31/075 (2006.01)

Patent

CA 1245330

Abstract of the Disclosure There is disclosed new and improved back reflector systems for use, for example, in photo- voltaic devices. The back reflector systems in- clude a layer of highly reflective material, such as a highly reflective and conductive metal of copper, gold, silver, or aluminum, or alloys thereof. Between the layer of highly reflective material and the semiconductor regions of the device is a layer of a transparent conductor. The transparent conductor can be, for example, a transparent conductive oxide such as indium tin oxide, cadmium stannate, or doped tin oxide. The transparent conductor serves as a reflec- tion enhancement layer for the highly conductive metal layer, and a transparent barrier to prevent diffusion of the highly reflective material into the semiconductor regions. The back reflecting systems of the present invention find particular applicability in photo- voltaic cells of the p-i-n configuration. The p-type layer preferably has a wide band gap and the active intrinsic region is preferably an amor- phous silicon alloy containing fluorine. Also disclosed is a tandem p-i-n photovoltaic cell embodying the invention.

423034

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