Bandgap tuning of semiconductor quantum well structures

Details Bandgap tuning of semiconductor quantum well structures Bandgap tuning of semiconductor quantum well structures

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H01L 21/425 (2006.01) H01L 21/18 (2006.01) H01L 21/324 (2006.01) H01S 5/34 (2006.01) H01S 5/20 (2006.01) H01S 5/343 (2006.01)

Patent

CA 2031090

BANDGAP TUNING OF SEMICONDUCTOR QUANTUM WELL STRUCTURES Abstract A method of selectively tuning the bandedge of a semiconductor heterostructure includes forming a disordered region which is spatially separated from a quantum well active region, and subsequently annealing the heterostructure so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier hetero- junctions. The tuning is spatially selective when the heterostructure is masked so that exposed portions correspond to regions where bandgap tuning is desirable. The heterostructures of interest are III-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.

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