Bipolar wide dynamic range photodetector system

Details Bipolar wide dynamic range photodetector system Bipolar wide dynamic range photodetector system

H - Electricity

03

K

328/114, 340/155

H03K 17/78 (2006.01) H01L 27/14 (2006.01)

Patent

CA 1208705

ABSTRACT OF THE DISCLOSURE A bipolar wide dynamic range photodetector system includes a bipolar transistor that is biased to operate in its active region and that has a high output resistance. A reverse (or zero) biased photodiode is connected in circuit with the collector electrode of the transistor and receives light of varying intensity from a light source. A negative feedback bias network including a transistor having a very high current gain is connected between the collector and base electrodes of the first-mentioned transistor to maintain the first-mentioned transistor operating in its normal active region. As a result, the base-emitter voltage of the first-mentioned transistor is a logarithmic function of current photogenerated in photodiode.

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