H - Electricity – 01 – G
Patent
H - Electricity
01
G
H01G 4/08 (2006.01) H01G 4/14 (2006.01)
Patent
CA 2167008
Capacitors with high dielectric strength and low dissipation factor over a wide range of frequencies comprise two or more conductive layers separated by at least one dielectric layer. The dielectric layer is of silicon-doped amorphous hydrogenated carbon, with suitable dopants including silane (which is preferred), tetraalkoxysilanes and polyorganosiloxanes.
Devre Michael Wayne
Gasworth Steven Marc
Company General Electric
Craig Wilson And Company
LandOfFree
Capacitor dielectrics of silicon-doped amorphous... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitor dielectrics of silicon-doped amorphous..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor dielectrics of silicon-doped amorphous... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1805941