Capacitor structures with dual dielectrics

H - Electricity – 01 – G

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H01G 4/20 (2006.01) H01G 4/10 (2006.01) H01L 21/02 (2006.01) H01L 25/16 (2006.01) H01L 27/102 (2006.01) H01L 29/94 (2006.01)

Patent

CA 1159917

Capacitor Structures With Dual Dielectrics Abstract A capacitor structure, for semiconductor devices, utilizing a dual or duplex dielectric wherein one dielectric layer is comprised of silicon nitride or aluminum oxide and a second dielectric layer is formed Ta2O5, HfO2, TiO2, PbTiO3, BaTiO3, CaTiO3 or SrTiO3. FI9-79-0377

381245

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