C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
117/85, 148/2.1
C30B 25/14 (2006.01) C30B 25/02 (2006.01)
Patent
CA 1305910
ABSTRACT OF THE DISCLOSURE A chemical vapor deposition method for depositing doped thin films of GaAs is disclosed, which is characterized in that, in the metal organic chemical vapor deposition method (MOCVD method) wherein arsine gas and organic gallium gas are allowed to react through thermal decomposition and GaAs crystals are deposited onto a GaAs substrate, the temperature of the substrate is raised to 700 to 800°C and kept thereat while gas having a group VI element as an ingredient such as hydrogen sulfide or the like is added to both source gases to deposit n-type GaAs crystals.
510172
Ikeda Masakiyo
Kashiwayanagi Yuzo
Kikuchi Hiroshi
Kojima Seiji
Borden Ladner Gervais Llp
Ikeda Masakiyo
Kashiwayanagi Yuzo
Kikuchi Hiroshi
Kojima Seiji
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