Chemical vapor deposition method for the thin film of...

Details Chemical vapor deposition method for the thin film of... Chemical vapor deposition method for the thin film of...

C - Chemistry, Metallurgy

23

C

117/85, 148/2.1

C23C 16/44 (2006.01) C23C 16/458 (2006.01) C30B 25/12 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1268688

ABSTRACT A method for chemical vapor deposition of a thin film of semiconductor is disclosed, which is characterized in that, in the method wherein semiconductor thin films are deposited onto the substrates by allowing a susceptor, in the shape of a polygonal frustum fitted with a plurality of semiconductor substrates on the side faces thereof, to rotate in a vertical type reaction tube, by introducing source gases and carrier gas into the tube, and by heating the substrates to allow the source gases to react through thermal decomposition etc. The number of rotations of he susceptor is varied in terms of rectangular wave function, trapezoidal wave function or sine wave function and the susceptor is allowed to rotate in converse directions depending on the positive region and the negative region of the function.

510171

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