Chemical vapor deposition of titanium nitride and like films

Details Chemical vapor deposition of titanium nitride and like films Chemical vapor deposition of titanium nitride and like films

C - Chemistry, Metallurgy

03

C

117/85, 88/94

C03C 17/245 (2006.01) C03C 17/22 (2006.01) C23C 16/34 (2006.01)

Patent

CA 1222912

ABSTRACT OF THE DISCLOSURE A novel process for placing a thin film of a metal nitride, e.g. titanium nitride, on a glass substrate by mixing a metal halide with a reducing gas like ammonia, preferably within a range of from about 250°C to 320°C, and then reacting the gases at the surface of a glass substrate heated to, e.g., about 400°C to about 700°C to form the film on the glass.

440868

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