Complementary lateral insulated gate rectifiers

H - Electricity – 01 – L

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H01L 29/78 (2006.01) H01L 27/08 (2006.01) H01L 29/739 (2006.01)

Patent

CA 1264866

ABSTRACT Complementary lateral insulated gate rectifiers A complementary Lateral Insulated Gate Rectifier (LIGR) includes two complementary LIGR structures fabricated in adjacent surface-adjoining semiconductor wells of the same conductivity type in a semiconductor substrate. The two LIGR structures are of generally similar configuration, thus simplifying the manufacturing process, and the proposed design additionally permits the n-channel and p-channel LIGR structures to have comparable "on" resistances. The two LIGR structures, otherwise isolated by a portion of the substrate separating the two semiconductor wells, are con- nected together by a common source electrode. The resulting complementary Lateral Insulated Gate Rectifier features a compact, integrated structure in which the "on" resistances of both the n-channel and p-channel portions of the device are comparable.

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