C - Chemistry – Metallurgy – 03 – C
Patent
C - Chemistry, Metallurgy
03
C
C03C 15/00 (2006.01) B44C 1/22 (2006.01) H01L 21/461 (2006.01)
Patent
CA 2599401
An improved composition and method for polishing a sapphire surface is disclosed. The method comprises abrading a sapphire surface, such as a C-plane or R-plane surface of a sapphire wafer, with a polishing slurry comprising an abrasive amount of an inorganic abrasive material such as colloidal silica suspended in an aqueous medium having a salt compound dissolved therein. The aqueous medium has a basic pH and includes the salt compound in an amount sufficient to enhance the sapphire removal rate relative to the rate achievable under the same polishing conditions using a the same inorganic abrasive in the absence of the salt compound.
L'invention concerne une composition et un procédé améliorés de polissage d'une surface de saphir. Ce procédé consiste à abraser une surface de saphir, telle qu'une surface de plan C ou de plan R d'une plaquette de saphir, au moyen d'une suspension épaisse de polissage contenant une quantité abrasive d'un matériau abrasif inorganique, tel que la silice colloïdale, en suspension dans un milieu aqueux contenant un composé de sel dissous. Le milieu aqueux présente un pH basique et contient le composé de sel dans une quantité suffisante pour augmenter la vitesse d'élimination de saphir par rapport à la vitesse pouvant être atteinte dans les mêmes conditions de polissage, au moyen du même abrasif inorganique, sans le composé de sel.
Cherian Isaac
Desai Mukesh
Moeggenborg Kevin
Cabot Microelectronics Corporation
Smart & Biggar
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