Compositions for cleaning ion implanted photoresist in front...

Details Compositions for cleaning ion implanted photoresist in front... Compositions for cleaning ion implanted photoresist in front...

H - Electricity

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H01L 21/311 (2006.01) C11D 11/00 (2006.01) G03F 7/42 (2006.01)

Patent

CA 2603393

A front end of the line (FEOL) stripping and cleaning composition for cleaning unashed ion-implanted photoresist from a wafer substrate comprises: a) at least one organic stripping solvent, b) fluoride ions from at least one of ammonium fluoride, ammonium bifluoride or hydrogen fluoride, c) at least one acidifying agent selected from inorganic or organic acids, and d) water, with an oxidizing agent optionally also being present in the composition.

L'invention concerne une composition de décapage et de nettoyage FEOL (front end of the line: d'entrée de ligne) permettant de décaper et d'éliminer une photorésine non brûlée sur une tranche de substrat, cette composition comprenant: a) au moins un solvant de décapage organique, b) des ions fluorure comprenant au moins un des composés suivants: fluorure d'ammonium, bifluorure d'ammonium et fluorure d'hydrogène, c) au moins un agent acidifiant choisi parmi les acides inorganiques ou les acides organiques, et d) de l'eau, cette composition pouvant en outre éventuellement comprendre un agent d'oxydation.

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