C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
117/104, 117/109
C23C 24/08 (2006.01) B05D 3/02 (2006.01) B05D 5/12 (2006.01) C23C 4/18 (2006.01) H01B 1/22 (2006.01) H05K 3/10 (2006.01) H05K 3/14 (2006.01) H05K 3/20 (2006.01) H05K 3/24 (2006.01)
Patent
CA 1298740
Abstract of the Disclosure A conductive metal layer is formed on a substrate having a softening point above about 200°C by depositing copper or nickel particles on the substrate, and heating and pressing the metal particles. Unlike similar methods, no developing agent is required to render the metal layer conductive. The coated substrates are useful for a variety of uses such as EMI shielding and printed circuit boards.
570693
Frank Dieter
Moy Paul Yuet Yee
Parr William John
Akzo America Inc.
Swabey Ogilvy Renault
LandOfFree
Conductive metallization of substrates without developing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Conductive metallization of substrates without developing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Conductive metallization of substrates without developing... will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1272973