Copper-to-gold thermal compression gang bonding of...

Details Copper-to-gold thermal compression gang bonding of... Copper-to-gold thermal compression gang bonding of...

Category

B - Operations, Transporting

Subcategory

23

Subsubcategory

K

CPC

356/173

IPC codes

B23K 20/00 (2006.01) H01L 21/603 (2006.01) H01L 23/485 (2006.01)

Type

Patent

Patent number

CA 1050668

Description

Application for Patent of CARMEN D. BURNS for COPPER-TO-GOLD THERMAL COMPRESSION GANG BONDING OF INTERCONNECT LEADS TO SEMICONDUCTIVE DEVICES ABSTRACT OF THE DISCLOSURE Gang bonding structures for connecting a semiconductive device to associated circuitry includes both copper and gold portions which are heated and pressed into thermal compression bonding relation. The resultant bond comprises a solid state diffusion of the copper portion into the gold portion to obtain, upon cooling thereof, a bonding interface between the copper and gold portions comprising a solid state diffusion of the copper into the gold. In a preferred embodiment such copper, to-gold thermal compression bonds are obtained between copper portions of gang bonding bumps on the semiconductive device and the inner ends of a copper interconnect lead structure as well as between the outer ends of the copper lead structure and gold plated inner ends of the lead frame structure of a base metal as of copper, nickel, or kovar.

Application Number

250140

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