Current controlled field effect transistor

Details Current controlled field effect transistor Current controlled field effect transistor

H - Electricity

01

L

H01L 29/812 (2006.01) H01L 27/095 (2006.01) H01L 29/739 (2006.01)

Patent

CA 2373602

Various emdodiments include a transistor device that is controlled by a gate current and that exhibits low power consumption as well as high speed characteristics. In various embodiments, an enhancement mode MESFET device exhibits channel drain current that is controlled by the application of bias current into the gate. Complementary n- and p-channel devices can be realized for, for example, micropower analog and digital circuit applications.

L'invention concerne plusieurs modes de réalisation d'un dispositif à transistor commandé par un courant de grille et possédant des caractéristiques de faible consommation de puissance et de vitesse élevée. Dans divers modes de réalisation, un dispositif MESFET (transistor métal-semiconducteur à effet de champ) à enrichissement possède un courant de drain de canal commandé par l'application d'un courant de polarisation dans la grille. Il est possible de réaliser des dispositifs à canal N et P complémentaires, destinés, par exemple, à des applications de circuits analogiques et numériques à micropuissance.

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