Dislocation free compound semiconductor wafer

Details Dislocation free compound semiconductor wafer Dislocation free compound semiconductor wafer

H - Electricity

01

L

356/178

H01L 29/06 (2006.01) C30B 15/00 (2006.01) C30B 25/02 (2006.01)

Patent

CA 2028808

ABSTRACT OF THE DISCLOSURE A compound semiconductor epitaxial wafer has a heteroepitaxial crystal layer grown on a compound semiconductor crystal substrate, which has a substantially circular configuration and is free of dislocation defects at least in a central area surrounded by a cut-off that prevents defects from propagating radially inwardly into said central area.

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