Downstream etching of substrates separated from plasma

Details Downstream etching of substrates separated from plasma Downstream etching of substrates separated from plasma

H - Electricity

01

L

204/96.05

H01L 21/302 (2006.01) H01J 37/32 (2006.01)

Patent

CA 1278767

Abstract: The present invention relates to a process for fabricating a device. The process includes the procedure of removing material from a plurality of substrates. The process comprises the steps of producing reactive species in a plasma and directing the species to the substrates and subsequently into an effluent wherein the substrates are disjoint from and not surrounded by the plasma. The process is characterized in that the volume of the plasma is at least 200 percent a large as the volume occupied by the substrates, and the concentration of the reactive species measured in the effluent in the absence of the substrate is at least 25 percent of the concentration of the species at the periphery of the plasma.

492689

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