4. H - Electricity
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Daniel Lawrence Flamm

H - Electricity – 01 – J

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Country: United States Of America

Downstream etching of substrates separated from plasma

H - Electricity – 01 – L
Patent

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Process for producing devices containing silicon nitride films

C - Chemistry – Metallurgy – 23 – C
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Processes depending on plasma generation

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Processes depending on plasma generation

H - Electricity – 01 – J
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Profile ID: LFCA-PAI-P-1207434

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