Processes depending on plasma generation

Details Processes depending on plasma generation Processes depending on plasma generation

H - Electricity

01

J

356/178

H01J 37/32 (2006.01) H05H 1/18 (2006.01) H05H 1/46 (2006.01)

Patent

CA 1303253

PROCESSES DEPENDING ON PLASMA GENERATION Abstract Anisotropic plasma etching is accomplished utilizing a helical resonator operated at relatively low gas pressure. The use of this combination yields an extremely high flux of ionic species with resulting rapid anisotropic etching. Ahelical resonator in conjunction with suitable precursors is also quite useful for plasma induced deposition.

612856

Affiliated with

Also associated with

Rating

Processes depending on plasma generation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Processes depending on plasma generation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Processes depending on plasma generation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1283680