Process for producing devices containing silicon nitride films

Details Process for producing devices containing silicon nitride films Process for producing devices containing silicon nitride films

C - Chemistry, Metallurgy

23

C

204/96.31

C23C 16/34 (2006.01) H01L 21/318 (2006.01)

Patent

CA 1327338

- 11 - PROCESS FOR PRODUCING DEVICES CONTAINING SILICON NITRIDE FILMS Abstract Silicon nitride regions suitable for applications such as capping layers in integrated circuit fabrication are produced by an advantageous plasma deposition process. This process utilizes a combination of gases, including a silicon-containing gas, a nitrogen-containing gas, a fluorine- containing gas, and a hydrogen-containing gas. Silicon nitride having a low density of defect states and thus having excellent dielectric properties is produced.

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