H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/25
H01L 27/10 (2006.01) H01L 21/74 (2006.01) H01L 21/822 (2006.01) H01L 21/8242 (2006.01) H01L 27/108 (2006.01)
Patent
CA 1232362
A DYNAMIC MEMORY DEVICE HAVING A SINGLE-CRYSTAL TRANSISTOR ON A TRENCH CAPACITOR STRUCTURE AND A FABRICATION METHOD THEREFOR ABSTRACT OF THE INVENTION Dynamic random access memory (DRAM) devices are taught wherein individual cells, including an access transistor and a storage capacitor are formed on a single-crystal semiconductor chip, and more particularly a three-dimensional dynamic random access memory (DRAM) device structure is described having a single-crystal access transistor stacked on top of a trench capacitor and a fabrication method therefor wherein crystallization seeds are provided by the single-crystal semiconductor area surrounding the cell and/or from the vertical sidewalls of the trench and wherein the access transistor is isolated by insulator. In the structure, a trench is located in a p+ type substrate containing heavily doped N+ polysilicon. A composite film of SiO2/Si3N4/Sio2 is provided for the capacitor storage insulator. A thin layer of SiO2 is disposed over the polysilicon. A lightly doped p-type epi silicon layer is located over the substrate and SiO2 layer. The access transistor for the memory cell is located on top of the trench capacitor. An N+ doped material connects the source region of the transistor to the polysilicon inside the trench. A medium doped p-region on top of the trench surface may be provided in case there is any significant amount of leakage current along the trench surface.
518033
International Business Machines Corporation
Rosen Arnold
LandOfFree
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