Electrically programmable memory element with improved contacts

Details Electrically programmable memory element with improved contacts Electrically programmable memory element with improved contacts

G - Physics

11

C

G11C 5/00 (2006.01) G11C 5/06 (2006.01) G11C 11/34 (2006.01) G11C 11/56 (2006.01) H01L 27/24 (2006.01) H01L 45/00 (2006.01)

Patent

CA 2367365

A memory element comprising a volume of phase change memory material (250); and first and second contact for supplying an electrical signal to the memory material (250), wherein the first contact comprises a conductive sidewall spacer (130A, B). Alternately, the first contact may comprise a contact layer having an edge adjacent to the memory material (250).

L'invention concerne un élément de mémoire comprenant un certain volume d'un matériau à changement de phase (250) ainsi qu'un premier et un second contacts destinés à émettre un signal électrique à destination du matériau à changement de phase, le premier contact comprenant un espaceur conducteur de parois latérales (130 A, B). En variante, le premier contact peut comprendre une couche de contact dont un bord est adjacent au matériau de mémoire.

Affiliated with

Also associated with

Rating

Electrically programmable memory element with improved contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically programmable memory element with improved contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically programmable memory element with improved contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1471681