4. G - Physics
  5. 11
  6. C

Patrick J. Klersy

G - Physics – 11 – C

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Country: United States Of America

Electrically erasable, directly overwritable, multibit...

G - Physics – 11 – C
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Electrically programmable memory element with improved contacts

G - Physics – 11 – C
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Improved thin-film structure for chalcogenide electrical...

H - Electricity – 01 – L
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Memory element with memory material comprising phase-change...

G - Physics – 11 – C
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Switch with improved threshold voltage

H - Electricity – 01 – C
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Profile ID: LFCA-PAI-P-1511884

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