Electrostatic bonded, silicon capacitive pressure transducer

Details Electrostatic bonded, silicon capacitive pressure transducer Electrostatic bonded, silicon capacitive pressure transducer

H - Electricity

01

G

356/200, 356/26,

H01G 7/00 (2006.01) G01L 1/14 (2006.01) G01L 9/00 (2006.01) H04R 19/00 (2006.01)

Patent

CA 1185453

Electrostatic Bonded, Silicon Capacitive Pressure Transducer Abstract A plurality of silicon pressure transducers 10 are formed by processing two conductive silicon wafers 11, 14, one of the wafers including a layer of borosilicate glass 32, a thin portion of which 17 is on the surface 12 of one of the plates of a capac- itor formed by field-assisted bonding together of the two wafers, the thin layer of borosilicate glass avoiding arcing during the field-assisted bonding process.

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