Electrostatically deformable thin silicon membranes

Details Electrostatically deformable thin silicon membranes Electrostatically deformable thin silicon membranes

H - Electricity

01

L

356/123, 356/200

H01L 41/02 (2006.01) F15C 5/00 (2006.01) G01L 7/08 (2006.01) G01L 9/00 (2006.01) H01G 5/16 (2006.01) H01L 29/84 (2006.01) H01L 41/08 (2006.01) H03H 9/17 (2006.01)

Patent

CA 1094229

ABSTRACT OF THE DISCLOSURE The invention relates to thin silicon membranes formed in layers of silicon such as are normally utilized as substrates in the manufacture of integrated electronic circuits. The thin membranes are capable of deformation by electrostatic forces and are applicable to a wide range of uses including the manufacture of solid state pressure sensors, resonant, and antenna structures, as well as electro-optical display elements.

290160

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