End point control in plasma etching

Details End point control in plasma etching End point control in plasma etching

H - Electricity

01

L

204/110, 356/192

H01L 21/465 (2006.01) G01N 21/62 (2006.01) G01N 21/73 (2006.01) H01J 37/32 (2006.01) H05H 1/00 (2006.01)

Patent

CA 1071579

Abstract of the Disclosure The end point in plasma etching is detected by monitoring the optical emission from the plasma, selecting a particular optical emission line and detecting a substantial variation in the intensity of the emission. This indicates a change in material being etched and thus the completion of etching of one material, or the beginning of etching of another material. It is also applicable to removing, or etching, photoresist material. - i -

261108

Affiliated with

Also associated with

Rating

End point control in plasma etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with End point control in plasma etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and End point control in plasma etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-731290