End-point detection in plasma etching of phosphosilicate glass

Details End-point detection in plasma etching of phosphosilicate glass End-point detection in plasma etching of phosphosilicate glass

C - Chemistry, Metallurgy

03

C

148/3.2

C03C 15/00 (2006.01) G01N 21/67 (2006.01) H01J 37/32 (2006.01)

Patent

CA 1189767

END-POINT DETECTION IN PLASMA ETCHING OF PHOSPHOSILICATE GLASS ABSTRACT A method for determining the completion of removal by plasma etching of phosphorus doped silicon dioxide from an underlying substrate. .,

397597

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