Enhanced quantum well infrared photodetector

Details Enhanced quantum well infrared photodetector Enhanced quantum well infrared photodetector

H - Electricity

01

L

H01L 31/02 (2006.01) H01L 27/146 (2006.01) H01L 31/0232 (2006.01) H01L 31/0236 (2006.01) H01L 31/0352 (2006.01)

Patent

CA 2220834

An infrared detector array includes a plurality of detector pixel structures (154-164) each of which comprises a plurality of elongate quantum well infrared radiation absorbing photoconductor (QWIP) elements. The group of QWIP elements are spaced such that they comprise a diffraction grating (190) for the received infrared radiation. Top (186) and bottom (196) longitudinal contacts are provided on opposite surfaces of the QWIP elongate elements to provide current flow transverse to the axis of the element to provide the required bias voltage. An infrared radiation reflector (196) is provided to form an optical cavity for receiving infrared radiation. A plurality of detector pixel structures (154-164) are combined to form a focal plane array. Each detector pixel structure (154-164) produces a signal that is transmitted through a conductive bump (166-172) to a terminal of a read out integrated circuit (180). The group of the signals from the detector pixel structures produces an image corresponding to the received infrared radiation.

Réseau de détection d'infrarouges comportant un ensemble de détecteurs à structure pixellaire (154-164) dont chacun comporte plusieurs éléments photoconducteurs allongés à puits quantique d'absorption de l'IR (QWIP) disposés de manière à former une grille de diffraction (190) du rayonnement IR reçu. Des contacts longitudinaux supérieurs (196) et inférieurs (196) sont prévus sur les surfaces opposées des éléments QWIP pour permettre le passage d'un courant transversal créant la tension de polarisation nécessaire. Un réflecteur de rayonnement IR (196) constitue une cavité optique réceptrice dudit rayonnement. Plusieurs structures pixellaires (154-164) peuvent être associées pour former un réseau placé dans le plan focal. Chacun de ces réseaux (154-164) produit un signal émis par l'intermédiaire d'une bosse de contact conductrice (166-172) vers la borne d'un circuit intégré de lecture (180). Le groupement des signaux des structures pixellaires produit une image correspondant au rayonnement IR reçu.

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