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Patent
H - Electricity
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H01L 29/16 (2006.01) H01L 21/82 (2006.01) H01L 27/06 (2006.01) H01L 29/161 (2006.01) H01L 29/167 (2006.01) H01L 29/36 (2006.01) H01L 29/772 (2006.01) H03D 7/12 (2006.01) H03F 3/60 (2006.01) H01L 29/24 (2006.01)
Patent
CA 2363437
Equipment for a communication system has a semiconductor device formed by integrating a Schottky diode, a MOSFET, a capacitor, and an inductor in a SiC substrate. The SiC substrate has a first multilayer portion and a second multilayer portion provided upwardly in this order. The first multilayer portion is composed of .delta.-doped layers each containing an n-type impurity (nitrogen) at a high concentration and undoped layers which are alternately stacked. The second multilayer portion is composed of .delta. - doped layers each containing a p-type impurity (aluminum) at a high concentration and undoped layers which are alternately stacked. Carriers in the .delta. -doped layers spread out extensively to the undoped layers. Because of a low impurity concentration in each of the undoped layers, scattering by impurity ions is reduced so that a low resistance and a high breakdown voltage are obtained.
Kitabatake Makoto
Kusumoto Osamu
Takahashi Kunimasa
Uchida Masao
Yokogawa Toshiya
Kirby Eades Gale Baker
Matsushita Electric Industrial Co. Ltd.
Panasonic Corporation
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