Etching method for obtaining at least one cavity in a...

Details Etching method for obtaining at least one cavity in a... Etching method for obtaining at least one cavity in a...

H - Electricity

01

L

H01L 21/306 (2006.01) H01H 1/00 (2006.01) H01L 21/308 (2006.01)

Patent

CA 2053859

2053859 9114281 PCTABS00007 Flat-bottomed cavities are formed in a substrate (2) by a method comprising two etching steps: a first anisotropic etching through a mask (4) leaving exposed bands (6, 8) of the substrate (2) and a second anisotropic etching through a mask leaving exposed all of the zones (Z1, Z2) to be etched. The first etching provides grooves in V form (10, 12) the depth (x1, x2) of which depends on the width of the bands, while the second etching increases the depth of the cavities by the same amount y, in eliminating the bands located between the grooves. Advantage: flat cavities of different depths may be obtained simultaneously.

Affiliated with

Also associated with

Rating

Etching method for obtaining at least one cavity in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching method for obtaining at least one cavity in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching method for obtaining at least one cavity in a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1509004