Etching method for znse polycrystalline substrate

Details Etching method for znse polycrystalline substrate Etching method for znse polycrystalline substrate

C - Chemistry, Metallurgy

03

C

C03C 15/02 (2006.01) C09K 13/00 (2006.01) G02B 1/02 (2006.01) G02B 5/18 (2006.01)

Patent

CA 2364745

When applying reactive ion etching on a ZnSe polycrystalline substrate, reactive gas used therefor is only chlorine-based gas which does not include a hydrocarbon group. Or the reactive gas is gas prepared by mixing chlorine- based gas which does not include a hydrocarbon group with other gas. The other gas is inert gas or gas which does not react to ZnSe. BCl3 gas is one kind of chlorine-based gas. Ar gas is one kind of inert gas. RF power is one means for activating the gas.

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