Etching techniques

Details Etching techniques Etching techniques

H - Electricity

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148/3.2

H01L 21/306 (2006.01) C04B 41/53 (2006.01) C09K 13/08 (2006.01) C23C 16/44 (2006.01) C23F 1/12 (2006.01) H01L 21/3065 (2006.01) H01L 21/311 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1235630

- 12 - Abstract A highly selective --greater than 100 to 1-- etch for silicon, tantalum, molybdenum and tungsten and non-oxidic tantalum, molybdenum and tungsten compositions such as tantalum silicide and tantalum nitride, molybdenum silicide and tungsten silicide,relative to their oxidic counterparts and silicon nitride is achieved by using polyatomic halogen fluorides. The selectivity (3) which is greater than 100 to 1 for silicon, tantalum and non-oxidic tantalum, is achievable without employing plasmas or wet etching.

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