Ethyl glycol etch for processes using metal silicides

Details Ethyl glycol etch for processes using metal silicides Ethyl glycol etch for processes using metal silicides

C - Chemistry, Metallurgy

03

C

149/21

C03C 15/00 (2006.01) H01L 21/311 (2006.01) H01L 21/3213 (2006.01) H01L 21/768 (2006.01)

Patent

CA 1238844

- 7 - ETHYLENE GLYCOL ETCH FOR PROCESSES USING METAL SILICIDES Abstract This invention relates to fabrication of devices which includes use of refractory metal silicides. A novel etchant which comprises a mixture of ethylene glycol and hydrofluoric acid, preferably buffered hydrofluoric acid, has been found to control the etch rate of refractory metal silicides, in particular titanium silicide, in a manner such that titanium silicide may be used in place of tantalum silicide for interconnects and gates in semiconductor integrated circuits.

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