Fabrication of a bipolar transistor with a polysilicon ribbon

Details Fabrication of a bipolar transistor with a polysilicon ribbon Fabrication of a bipolar transistor with a polysilicon ribbon

H - Electricity

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H01L 21/31 (2006.01) H01L 21/033 (2006.01) H01L 21/225 (2006.01) H01L 21/331 (2006.01)

Patent

CA 1264381

ABSTRACT OF THE DISCLOSURE In the fabrication of bipolar transistors by the single poly process, polysilicon sidewalls are formed along portions of a polysilicon layer that functions as a device contact. The sidewalls serve both as dopant sources which determine the width of underlying base and emitter regions, and as contacts to these devices. Since the thickness of the polysilicon sidewalls, and hence the width of the underlying device regions, are precisely controllable through conventional polysilicon deposition techniques, relatively relaxed design rules can be employed while making possible the formation of emitters having widths less than one-half of a micron.

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