4. H - Electricity
  5. 01
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Gregory N. Burton

H - Electricity – 01 – L

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Country: United States Of America

Fabrication of a bipolar transistor with a polysilicon ribbon

H - Electricity – 01 – L
Patent

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Submerged wall isolation of silicon islands

H - Electricity – 01 – L
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Fabrication of a bipolar transistor with a polysilicon ribbon

H - Electricity – 01 – L
Patent

  [ 0.00 ] – not rated yet Voters 0   Comments 0

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Profile ID: LFCA-PAI-P-1078209

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