Submerged wall isolation of silicon islands

Details Submerged wall isolation of silicon islands Submerged wall isolation of silicon islands

H - Electricity

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356/138

H01L 21/465 (2006.01) H01L 21/306 (2006.01) H01L 21/762 (2006.01) H01L 21/763 (2006.01)

Patent

CA 1249074

ABSTRACT OF THE DISCLOSURE To completely isolate an island of silicon, a trench is cut into an epitaxial layer to provide access to a differently doped buried layer. While suspending the portion of the epitax- ial layer surrounded by the trench by means of an oxide bridge, the underlying region of the buried layer is etched away to form a cavity under the active area. This cavity, as well as the surrounding trench, is then filled with a suitable insulating material to isolate the active island from the substrate.

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