Fabrication of high-speed dielectrically isolated devices...

Details Fabrication of high-speed dielectrically isolated devices... Fabrication of high-speed dielectrically isolated devices...

H - Electricity

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356/178

H01L 21/74 (2006.01) H01L 21/225 (2006.01) H01L 21/76 (2006.01) H01L 21/762 (2006.01)

Patent

CA 1286038

- 11 - HIGH-SPEED DIELECTRICALLY ISOLATED DEVICES UTILIZING BURIED SILICIDE REGIONS AND FABRICATION THEREOF Abstract A dielectrically-isolated structure and method of fabricating the same is disclosed wherein the structure includes a layer of silicide which is selectively doped, preferably using an ion implantation process. The doped silicide is then used as the diffusion source for the subsequent formation (through a heat treatment) of various active portions (collector, emitter, drain, source, for example) of a variety of high-voltage, high-speed active devices. The non-doped silicide is advantageously utilized as a low-resistance contact between the buried diffusionregion and the surface electrode.

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