4. H - Electricity
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Anatoly Feygenson

H - Electricity – 01 – L

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Country: United States Of America

Device fabrication and resulting devices

H - Electricity – 01 – L
Patent

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Fabrication of high-speed dielectrically isolated devices...

H - Electricity – 01 – L
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Submicron bipolar transistor with buried silicide region

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Techniques useful in fabricating semiconductor devices...

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Profile ID: LFCA-PAI-P-1112422

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